Image is for illustrative purposes only.
Please refer to product description.
Silicon Pin Diode
The NTE555 is designed primarily for high-efficiency UHF and VHF detector applications. It is readily adaptable to may other fast switching RF and digital applications.
Schottky Barrier Construction Provides Stable Characteristics by Eliminating
the “Cat-Whisker” or “S-Bend” Contact
Very Low Capacitance: 1.0pF
Extremely Low Minority Carrier Lifetime: 100ps (Max)
High Reverse Voltage: VR = 50V
Low Reverse Leakage Current: IR = 200nA (Max)
Additional Model #'s
This product was added to our catalog on Thursday 20 April, 2017.